
P-channel silicon MOSFET, surface mount, in a SOIC package. Features 40V drain-to-source voltage (Vdss) and 6A continuous drain current (ID). Offers low 38mΩ drain-to-source resistance (Rds On Max) and fast switching with 1.9ns turn-on delay. Operates from -55°C to 150°C with 1.56W maximum power dissipation. RoHS and REACH SVHC compliant.
Diodes DMP4050SSS-13 technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Resistance | 38mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 12.6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 674pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.56W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 50mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 31.5ns |
| Turn-On Delay Time | 1.9ns |
| Weight | 0.00261oz |
| Width | 4mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes DMP4050SSS-13 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
