
P-channel MOSFET with 40V drain-source voltage and 7.2A continuous drain current. Features low 51mΩ drain-source on-resistance and 674pF input capacitance. Operates from -55°C to 150°C with a 4.18W maximum power dissipation. Packaged in a TO-252-3 surface-mount package, this silicon metal-oxide semiconductor FET is RoHS compliant.
Diodes DMP4051LK3-13 technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 7.2A |
| Drain to Source Resistance | 41mR |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 51mR |
| Fall Time | 14.3ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Input Capacitance | 674pF |
| Lead Free | Lead Free |
| Length | 6.7mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 4.18W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Rds On Max | 51mR |
| Reach SVHC Compliant | No |
| Resistance | 51mR |
| RoHS Compliant | Yes |
| Threshold Voltage | -3V |
| Turn-Off Delay Time | 25.1ns |
| Turn-On Delay Time | 2.3ns |
| Weight | 0.139332oz |
| Width | 6.2mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes DMP4051LK3-13 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
