P-channel MOSFET with 40V drain-source voltage and 7.2A continuous drain current. Features low 51mΩ drain-source on-resistance and 674pF input capacitance. Operates from -55°C to 150°C with a 4.18W maximum power dissipation. Packaged in a TO-252-3 surface-mount package, this silicon metal-oxide semiconductor FET is RoHS compliant.
PackageTO-252-3
Resistance51mR
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Diodes DMP4051LK3-13 technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
7.2A
Drain to Source Resistance
41mR
Drain to Source Voltage (Vdss)
40V
Drain-source On Resistance-Max
51mR
Fall Time
14.3ns
Gate to Source Voltage (Vgs)
20V
Height
2.39mm
Input Capacitance
674pF
Lead Free
Lead Free
Length
6.7mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
4.18W
Mount
Surface Mount
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Rds On Max
51mR
Reach SVHC Compliant
No
Resistance
51mR
RoHS Compliant
Yes
Threshold Voltage
-3V
Turn-Off Delay Time
25.1ns
Turn-On Delay Time
2.3ns
Weight
0.139332oz
Width
6.2mm
Compliance
RoHS
Compliant
Datasheet
Diodes DMP4051LK3-13 Datasheet
Download the complete datasheet for Diodes DMP4051LK3-13 to view detailed technical specifications.
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