
N-Channel Metal-oxide Semiconductor FET for small signal applications. Features a continuous drain current of 9.5A and a low drain-to-source resistance of 9mR. Operates with a drain-to-source voltage up to 30V and a gate-to-source voltage of 12V. Offers fast switching speeds with a fall time of 6.6ns, turn-on delay of 5.5ns, and turn-off delay of 33.1ns. This surface mount component has a maximum power dissipation of 1W and an operating temperature range of -55°C to 150°C. Compliant with RoHS and REACH SVHC standards.
Diodes DMS3014SFG-7 technical specifications.
| Continuous Drain Current (ID) | 9.5A |
| Drain to Source Resistance | 9mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 6.6ns |
| FET Type | 1 N-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 0.85mm |
| Input Capacitance | 4.31nF |
| Lead Free | Lead Free |
| Length | 3.35mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 13mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 33.1ns |
| Turn-On Delay Time | 5.5ns |
| Weight | 0.00254oz |
| Width | 3.35mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes DMS3014SFG-7 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
