N-Channel Power MOSFET, 30V Drain-Source Voltage, 9.8A Continuous Drain Current, and 13mΩ Max Drain-Source Resistance. This silicon Metal-Oxide-Semiconductor FET features a 1-element, N-channel configuration with a 1V threshold voltage. Operating across a temperature range of -55°C to 150°C, it offers a 1.54W maximum power dissipation and is designed for surface mounting in an SOP-8 package. Key switching characteristics include a 4.69ns fall time and 6.62ns turn-on delay time.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
Power1.54W
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Technical Specifications
Diodes DMS3016SSS-13 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 9.8A |
| Drain to Source Resistance | 9mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 4.69ns |
| FET Type | 1 N-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 1.849nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.54W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.54W |
| Radiation Hardening | No |
| Rds On Max | 13mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 1V |
| Turn-Off Delay Time | 36.41ns |
| Turn-On Delay Time | 6.62ns |
| Weight | 0.00261oz |
Compliance
| RoHS | Compliant |
Datasheet
Diodes DMS3016SSS-13 Datasheet
Download the complete datasheet for Diodes DMS3016SSS-13 to view detailed technical specifications.
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