N-channel enhancement mode MOSFET designed for power switching applications. Features low on-resistance for efficient power delivery and fast switching speeds for improved performance. Offers a continuous drain current capability of 10A and a drain-source voltage rating of 60V. Ideal for power management circuits, DC-DC converters, and motor control applications.
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Technical Specifications
Diodes DMT6009LSS-13 technical specifications.
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Diodes DMT6009LSS-13 Datasheet
Download the complete datasheet for Diodes DMT6009LSS-13 to view detailed technical specifications.
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