PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 60V collector-emitter breakdown voltage and a maximum collector current of 1A. Operates with a transition frequency of 150MHz and a maximum power dissipation of 300mW. Packaged in a SOT-23 surface mount plastic package, this component is lead-free and RoHS compliant.
PackageSOT-23
Current Rating-1A
MountingSurface Mount
PolarityPNP
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Technical Specifications
Diodes DPBT8105-7 technical specifications.
General
Package/Case
SOT-23
Collector Base Voltage (VCBO)
-80V
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
-600mV
Collector-emitter Voltage-Max
600mV
Current Rating
-1A
Emitter Base Voltage (VEBO)
-5V
Gain Bandwidth Product
150MHz
Height
1mm
Lead Free
Lead Free
Length
3mm
Max Breakdown Voltage
60V
Max Collector Current
1A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
300mW
Mount
Surface Mount
Package Quantity
3000
Packaging
Tape and Reel
Polarity
PNP
Radiation Hardening
No
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Transition Frequency
150MHz
DC Rated Voltage
-60V
Weight
0.000282oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Diodes DPBT8105-7 Datasheet
Download the complete datasheet for Diodes DPBT8105-7 to view detailed technical specifications.
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