
PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 3A maximum collector current and 50V collector-emitter breakdown voltage. Operates with a transition frequency of 100MHz and a maximum power dissipation of 1W. Packaged in a surface-mount SOT-89 plastic package, this component is lead-free and RoHS compliant, suitable for operation between -55°C and 150°C.
Diodes DPLS350Y-13 technical specifications.
| Package/Case | SOT-89 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | -390mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 390mV |
| Emitter Base Voltage (VEBO) | -6V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| Height | 1.5mm |
| Lead Free | Lead Free |
| Length | 4.5mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 3A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| Weight | 0.001834oz |
| Width | 2.48mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes DPLS350Y-13 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
