PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 40V Collector Emitter Breakdown Voltage (VCEO) and a maximum collector current of 1A. Operates with a minimum hFE of 300 and a transition frequency of 150MHz. Housed in an ultra-small SOT-323 plastic package, suitable for surface mounting. Offers a wide operating temperature range from -55°C to 150°C.
Frequency150MHz
PackageSOT-323
MountingSurface Mount
PolarityPNP
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Technical Specifications
Diodes DSS5140U-7 technical specifications.
General
Package/Case
SOT-323
Collector Base Voltage (VCBO)
40V
Collector Emitter Breakdown Voltage
40V
Collector Emitter Saturation Voltage
-500mV
Collector Emitter Voltage (VCEO)
40V
Collector-emitter Voltage-Max
500mV
Emitter Base Voltage (VEBO)
-5V
Frequency
150MHz
Gain Bandwidth Product
150MHz
Height
1mm
hFE Min
300
Lead Free
Lead Free
Length
2.15mm
Max Breakdown Voltage
40V
Max Collector Current
1A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
400mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
400mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Transition Frequency
150MHz
Weight
0.000212oz
Width
1.3mm
Compliance
RoHS
Compliant
Datasheet
Diodes DSS5140U-7 Datasheet
Download the complete datasheet for Diodes DSS5140U-7 to view detailed technical specifications.
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