PNP Bipolar Junction Transistor (BJT) for small signal applications. Features a 60V collector-emitter breakdown voltage and a maximum collector current of 1A. Offers a minimum DC current gain (hFE) of 200 and a transition frequency of 150MHz. Packaged in an ultra-small, plastic SOT-323 surface-mount package. Operates across a wide temperature range from -55°C to 150°C.
Frequency150MHz
PackageSOT-323
MountingSurface Mount
PolarityPNP
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Technical Specifications
Diodes DSS5160U-7 technical specifications.
General
Package/Case
SOT-323
Collector Base Voltage (VCBO)
-80V
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
-340mV
Collector Emitter Voltage (VCEO)
60V
Collector-emitter Voltage-Max
340mV
Emitter Base Voltage (VEBO)
-5V
Gain Bandwidth Product
150MHz
Height
1mm
hFE Min
200
Lead Free
Lead Free
Length
2.15mm
Max Breakdown Voltage
60V
Max Collector Current
1A
Max Frequency
150MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
400mW
Mount
Surface Mount
Package Quantity
3000
Packaging
Tape and Reel
Polarity
PNP
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Transition Frequency
150MHz
Weight
0.000212oz
Width
1.3mm
Compliance
RoHS
Compliant
Datasheet
Diodes DSS5160U-7 Datasheet
Download the complete datasheet for Diodes DSS5160U-7 to view detailed technical specifications.
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