NPN silicon bipolar junction transistor (BJT) for surface mount applications. Features a 6A continuous collector current (I(C)) and a 60V collector-emitter breakdown voltage (V(BR)CEO). Offers a minimum DC current gain (hFE) of 150 and a transition frequency (fT) of 100MHz. Packaged in a 4-pin SOT-223 plastic package, this RoHS compliant component operates from -55°C to 150°C.
Frequency100MHz
PackageSOT-223
MountingSurface Mount
PolarityNPN
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Technical Specifications
Diodes DSS60601MZ4-13 technical specifications.
General
| Package/Case | SOT-223 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 300mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 300mV |
| Emitter Base Voltage (VEBO) | 6V |
| Gain Bandwidth Product | 100MHz |
| Height | 1.6mm |
| hFE Min | 150 |
| Lead Free | Lead Free |
| Length | 6.5mm |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 6A |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.2W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Transition Frequency | 100MHz |
| Weight | 0.000282oz |
| Width | 3.5mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes DSS60601MZ4-13 Datasheet
Download the complete datasheet for Diodes DSS60601MZ4-13 to view detailed technical specifications.
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