
NPN silicon bipolar junction transistor, surface mount, 2-element configuration. Features 40V collector-emitter breakdown voltage, 200mA continuous collector current, and 200mV collector-emitter saturation voltage. Operates with a transition frequency of 300MHz and a maximum power dissipation of 300mW. Packaged in SOT-963 for tape and reel delivery.
Diodes DST3946DPJ-7 technical specifications.
| Package/Case | SOT-963 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 200mV |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector-emitter Voltage-Max | 300mV |
| Continuous Collector Current | 200mA |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 300MHz |
| Gain Bandwidth Product | 300MHz |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 200mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | NPN, PNP |
| Power Dissipation | 300mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 300MHz |
| RoHS | Compliant |
Download the complete datasheet for Diodes DST3946DPJ-7 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
