NPN bipolar junction transistor (BJT) for surface mount applications in a SOT-363 package. Features a maximum collector current of 1A and a collector-emitter breakdown voltage of 18V. Offers a minimum DC current gain (hFE) of 150 and a transition frequency of 100MHz. Designed for operation within a temperature range of -55°C to 150°C with a maximum power dissipation of 200mW.
Diodes DVR2V5W-7 technical specifications.
Download the complete datasheet for Diodes DVR2V5W-7 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.