NPN silicon bipolar junction transistor (BJT) for general-purpose amplification and switching. Features a 40V collector-emitter breakdown voltage (VCEO) and a maximum collector current of 600mA. Operates with a transition frequency of 300MHz and a power dissipation of 1W. Packaged in a surface-mount SOT-89-3L plastic case, this component is lead-free and RoHS compliant, suitable for operation across a wide temperature range from -55°C to 150°C.
Frequency300MHz
PackageSOT-89
MountingSurface Mount
PolarityNPN
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Technical Specifications
Diodes DXT2222A-13 technical specifications.
General
| Package/Case | SOT-89 |
| Collector Base Voltage (VCBO) | 75V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector-emitter Voltage-Max | 1V |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 300MHz |
| Gain Bandwidth Product | 300MHz |
| Height | 1.5mm |
| Lead Free | Lead Free |
| Length | 4.5mm |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 600mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 300MHz |
| Weight | 0.001834oz |
| Width | 2.48mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes DXT2222A-13 Datasheet
Download the complete datasheet for Diodes DXT2222A-13 to view detailed technical specifications.
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