NPN bipolar junction transistor (BJT) for small signal applications. Features a 400V collector-emitter breakdown voltage (VCEO) and 300mA continuous collector current (IC). Operates with a maximum power dissipation of 2.8W and a transition frequency of 50MHz. Packaged in a TO-252 surface-mount plastic package, this silicon transistor is lead-free and RoHS compliant.
Frequency50MHz
MountingSurface Mount
PolarityNPN
Power2.8W
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Technical Specifications
Diodes DXT458P5-13 technical specifications.
General
| Collector Base Voltage (VCBO) | 400V |
| Collector Emitter Breakdown Voltage | 400V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 400V |
| Collector-emitter Voltage-Max | 500mV |
| Continuous Collector Current | 300mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 50MHz |
| Gain Bandwidth Product | 50MHz |
| Height | 1.15mm |
| Lead Free | Lead Free |
| Length | 4.05mm |
| Max Breakdown Voltage | 400V |
| Max Collector Current | 300mA |
| Max Frequency | 50MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.8W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 5000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 2.8W |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 50MHz |
| Weight | 0.003386oz |
| Width | 5.45mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes DXT458P5-13 Datasheet
Download the complete datasheet for Diodes DXT458P5-13 to view detailed technical specifications.
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