NPN bipolar junction transistor (BJT) for small signal applications. Features a 160V collector-emitter breakdown voltage and 600mA continuous collector current. Offers a 200mV collector-emitter saturation voltage and a 130MHz transition frequency. Packaged in a TO-252 (POWERDI5) surface-mount plastic package, this RoHS compliant component operates from -55°C to 150°C with a maximum power dissipation of 2.25W.
MountingSurface Mount
PolarityNPN
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Technical Specifications
Diodes DXT5551P5-13 technical specifications.
General
| Collector Base Voltage (VCBO) | 180V |
| Collector Emitter Breakdown Voltage | 160V |
| Collector Emitter Saturation Voltage | 200mV |
| Collector-emitter Voltage-Max | 200mV |
| Continuous Collector Current | 600mA |
| Emitter Base Voltage (VEBO) | 6V |
| Gain Bandwidth Product | 130MHz |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 160V |
| Max Collector Current | 600mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.25W |
| Mount | Surface Mount |
| Package Quantity | 5000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 130MHz |
| Weight | 0.003386oz |
Compliance
| RoHS | Compliant |
Datasheet
Diodes DXT5551P5-13 Datasheet
Download the complete datasheet for Diodes DXT5551P5-13 to view detailed technical specifications.
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