NPN bipolar junction transistor designed for small signal applications. Features a 45V collector-emitter breakdown voltage and a 3A continuous collector current. Operates with a 350mV collector-emitter saturation voltage and a 150MHz transition frequency. Packaged in a green, plastic TO-252 (POWERDI 5) surface-mount package, this silicon transistor offers a wide operating temperature range from -55°C to 150°C.
Diodes DXT690BP5-13 technical specifications.
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | 350mV |
| Collector-emitter Voltage-Max | 350mV |
| Continuous Collector Current | 3A |
| Emitter Base Voltage (VEBO) | 7V |
| Gain Bandwidth Product | 150MHz |
| Height | 1.15mm |
| Length | 4.05mm |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 3A |
| Max Frequency | 150MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.2W |
| Mount | Surface Mount |
| Package Quantity | 5000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 150MHz |
| Weight | 0.003386oz |
| Width | 5.45mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes DXT690BP5-13 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
