PNP Bipolar Junction Transistor (BJT) for small signal applications. Features a 40V collector-emitter breakdown voltage and a continuous collector current of -3A. Offers a minimum DC current gain (hFE) of 300 and a transition frequency of 100MHz. Packaged in a TO-252 (POWERDI 5) surface-mount plastic package, operating from -55°C to 150°C. RoHS and REACH SVHC compliant.
Frequency100MHz
MountingSurface Mount
PolarityPNP
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Technical Specifications
Diodes DXT790AP5-13 technical specifications.
General
| Collector Base Voltage (VCBO) | -50V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | -170mV |
| Collector-emitter Voltage-Max | 450mV |
| Continuous Collector Current | -3A |
| Emitter Base Voltage (VEBO) | -5V |
| Gain Bandwidth Product | 100MHz |
| Height | 1.15mm |
| hFE Min | 300 |
| Length | 4.05mm |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 3A |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.2W |
| Mount | Surface Mount |
| Package Quantity | 5000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| Weight | 0.003386oz |
| Width | 5.45mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes DXT790AP5-13 Datasheet
Download the complete datasheet for Diodes DXT790AP5-13 to view detailed technical specifications.
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