PNP Silicon Bipolar Junction Transistor (BJT) in a SOT-223 plastic package. Features a maximum continuous collector current of 5A and a collector-emitter breakdown voltage of 60V. Offers a collector-emitter saturation voltage of -370mV and a gain bandwidth product of 120MHz. Designed for surface mounting with a maximum power dissipation of 1W and operates across a temperature range of -55°C to 150°C.
PackageSOT-223
MountingSurface Mount
PolarityPNP
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Technical Specifications
Diodes DZT951-13 technical specifications.
General
| Package/Case | SOT-223 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | -370mV |
| Collector-emitter Voltage-Max | 460mV |
| Continuous Collector Current | -5A |
| Emitter Base Voltage (VEBO) | 6V |
| Gain Bandwidth Product | 120MHz |
| Height | 1.65mm |
| hFE Min | 10 |
| Length | 6.7mm |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 120MHz |
| Weight | 0.000282oz |
| Width | 3.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes DZT951-13 Datasheet
Download the complete datasheet for Diodes DZT951-13 to view detailed technical specifications.
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