NPN bipolar junction transistor for small signal applications, featuring a 3A continuous collector current and a 40V collector-emitter breakdown voltage. This silicon transistor operates with a 155MHz gain bandwidth product and a 340mV collector-emitter saturation voltage. Housed in a SOT-89 surface mount package, it offers a wide operating temperature range from -55°C to 150°C and a maximum power dissipation of 2W. RoHS compliant and lead-free.
Frequency155MHz
PackageSOT-89
Current Rating3A
MountingSurface Mount
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Technical Specifications
Diodes FCX1051ATA technical specifications.
General
Package/Case
SOT-89
Collector Base Voltage (VCBO)
150V
Collector Emitter Breakdown Voltage
40V
Collector Emitter Saturation Voltage
340mV
Collector Emitter Voltage (VCEO)
40V
Collector-emitter Voltage-Max
340mV
Continuous Collector Current
3A
Current Rating
3A
Emitter Base Voltage (VEBO)
5V
Frequency
155MHz
Gain Bandwidth Product
155MHz
Height
1.6mm
hFE Min
270
Lead Free
Lead Free
Length
4.6mm
Max Breakdown Voltage
40V
Max Collector Current
3A
Max Frequency
155MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
2W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Transition Frequency
155MHz
DC Rated Voltage
40V
Weight
0.001834oz
Width
2.6mm
Compliance
RoHS
Compliant
Datasheet
Diodes FCX1051ATA Datasheet
Download the complete datasheet for Diodes FCX1051ATA to view detailed technical specifications.
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