NPN silicon bipolar junction transistor in SOT-89 package, featuring a 3A continuous collector current and 75V collector-emitter breakdown voltage. This surface mount device offers a 140MHz transition frequency and a maximum power dissipation of 1.6W. Operating across a temperature range of -55°C to 150°C, it is RoHS and REACH SVHC compliant.
Diodes FCX1053ATA technical specifications.
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