PNP Bipolar Junction Transistor (BJT) in SOT-89 package. Features a collector-emitter breakdown voltage of 40V, continuous collector current of 3A, and a transition frequency of 145MHz. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 2W. This surface mount component is RoHS compliant.
Diodes FCX1151ATA technical specifications.
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