
NPN silicon bipolar junction transistor in a SOT-89 package. Features a 40V collector-emitter breakdown voltage (VCEO) and a 1A continuous collector current (IC). Offers a 150MHz gain bandwidth product and a 1W maximum power dissipation. Operates across a temperature range of -65°C to 150°C. Surface mountable with RoHS compliance.
Diodes FCX491ATA technical specifications.
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