NPN silicon bipolar junction transistor (BJT) for small signal applications. Features a 60V collector-emitter breakdown voltage (VCEO) and a 1A continuous collector current. Operates with a 150MHz gain bandwidth product and a maximum power dissipation of 1W. Packaged in a SOT-89 surface-mount case, this RoHS compliant component is supplied on tape and reel.
Frequency150MHz
PackageSOT-89
Current Rating1A
MountingSurface Mount
Quick Jump:
Technical Specifications
Diodes FCX491TA technical specifications.
General
Package/Case
SOT-89
Collector Base Voltage (VCBO)
80V
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
500mV
Collector Emitter Voltage (VCEO)
60V
Collector-emitter Voltage-Max
500mV
Continuous Collector Current
1A
Current Rating
1A
Emitter Base Voltage (VEBO)
5V
Frequency
150MHz
Gain Bandwidth Product
150MHz
Height
1.5mm
Lead Free
Lead Free
Length
4.5mm
Max Breakdown Voltage
60V
Max Collector Current
1A
Max Frequency
150MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
1W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
1W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
150MHz
DC Rated Voltage
60V
Weight
0.001834oz
Width
2.5mm
Compliance
RoHS
Compliant
Datasheet
Diodes FCX491TA Datasheet
Download the complete datasheet for Diodes FCX491TA to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
