PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 400V Collector Emitter Breakdown Voltage (VCEO) and a continuous collector current rating of -200mA. Operates with a 50MHz gain bandwidth product and a maximum power dissipation of 1W. Packaged in a SOT-89 surface mount case, this RoHS compliant component is supplied on tape and reel.
Frequency50MHz
PackageSOT-89
Current Rating-200mA
MountingSurface Mount
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Technical Specifications
Diodes FCX558TA technical specifications.
General
Package/Case
SOT-89
Collector Base Voltage (VCBO)
400V
Collector Emitter Breakdown Voltage
400V
Collector Emitter Saturation Voltage
-500mV
Collector Emitter Voltage (VCEO)
400V
Collector-emitter Voltage-Max
500mV
Continuous Collector Current
-200mA
Current Rating
-200mA
Emitter Base Voltage (VEBO)
5V
Frequency
50MHz
Gain Bandwidth Product
50MHz
Height
1.5mm
Lead Free
Lead Free
Length
4.5mm
Max Breakdown Voltage
400V
Max Collector Current
200mA
Max Frequency
50MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
1W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
1W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
50MHz
DC Rated Voltage
-400V
Weight
0.001834oz
Width
2.5mm
Compliance
RoHS
Compliant
Datasheet
Diodes FCX558TA Datasheet
Download the complete datasheet for Diodes FCX558TA to view detailed technical specifications.
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