PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 40V Collector-Emitter Breakdown Voltage (VCEO) and a continuous collector current rating of -1A. Operates with a maximum power dissipation of 1W and a transition frequency of 150MHz. Packaged in a SOT-89 surface-mount plastic package, this RoHS compliant component offers a wide operating temperature range from -65°C to 150°C.
Frequency150MHz
PackageSOT-89
Current Rating-1A
MountingSurface Mount
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Technical Specifications
Diodes FCX591ATA technical specifications.
General
Package/Case
SOT-89
Collector Base Voltage (VCBO)
40V
Collector Emitter Breakdown Voltage
40V
Collector Emitter Saturation Voltage
-500mV
Collector Emitter Voltage (VCEO)
40V
Collector-emitter Voltage-Max
500mV
Continuous Collector Current
-1A
Current Rating
-1A
Emitter Base Voltage (VEBO)
-5V
Frequency
150MHz
Gain Bandwidth Product
150MHz
Height
1.5mm
Lead Free
Lead Free
Length
4.5mm
Max Breakdown Voltage
40V
Max Collector Current
1A
Max Frequency
150MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
1W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
1W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
150MHz
DC Rated Voltage
-40V
Weight
0.001834oz
Width
2.5mm
Compliance
RoHS
Compliant
Datasheet
Diodes FCX591ATA Datasheet
Download the complete datasheet for Diodes FCX591ATA to view detailed technical specifications.
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