PNP Silicon Bipolar Junction Transistor, surface mountable in SOT-89 package. Features a continuous collector current of -1A, collector-emitter breakdown voltage of 60V, and a transition frequency of 150MHz. Operates across a wide temperature range from -65°C to 150°C with a maximum power dissipation of 1W. This RoHS compliant component offers a collector-emitter saturation voltage of -600mV.
Frequency150MHz
PackageSOT-89
Current Rating-1A
MountingSurface Mount
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Technical Specifications
Diodes FCX591TA technical specifications.
General
Package/Case
SOT-89
Collector Base Voltage (VCBO)
80V
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
-600mV
Collector Emitter Voltage (VCEO)
60V
Collector-emitter Voltage-Max
600mV
Continuous Collector Current
-1A
Current Rating
-1A
Emitter Base Voltage (VEBO)
5V
Frequency
150MHz
Gain Bandwidth Product
150MHz
Height
1.5mm
Lead Free
Lead Free
Length
4.5mm
Max Breakdown Voltage
60V
Max Collector Current
1A
Max Frequency
150MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
1W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
1W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
150MHz
DC Rated Voltage
-60V
Weight
0.001834oz
Width
2.5mm
Compliance
RoHS
Compliant
Datasheet
Diodes FCX591TA Datasheet
Download the complete datasheet for Diodes FCX591TA to view detailed technical specifications.
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