PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 100V Collector Emitter Breakdown Voltage (VCEO) and a continuous collector current rating of -1A. Offers a maximum power dissipation of 1W and a transition frequency of 50MHz. Packaged in a SOT-89 surface-mount case, this component is RoHS and Lead Free compliant.
Frequency50MHz
PackageSOT-89
Current Rating-1A
MountingSurface Mount
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Technical Specifications
Diodes FCX593TA technical specifications.
General
Package/Case
SOT-89
Collector Base Voltage (VCBO)
120V
Collector Emitter Breakdown Voltage
100V
Collector Emitter Saturation Voltage
-300mV
Collector Emitter Voltage (VCEO)
100V
Collector-emitter Voltage-Max
300mV
Continuous Collector Current
-1A
Current Rating
-1A
Emitter Base Voltage (VEBO)
5V
Frequency
50MHz
Gain Bandwidth Product
50MHz
Height
1.5mm
Lead Free
Lead Free
Length
4.5mm
Max Breakdown Voltage
100V
Max Collector Current
1A
Max Frequency
50MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
1W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
1W
Radiation Hardening
No
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Transition Frequency
50MHz
DC Rated Voltage
-100V
Weight
0.001834oz
Width
2.5mm
Compliance
RoHS
Compliant
Datasheet
Diodes FCX593TA Datasheet
Download the complete datasheet for Diodes FCX593TA to view detailed technical specifications.
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