NPN bipolar junction transistor (BJT) for small signal applications. Features a 120V collector-emitter breakdown voltage (VCEO) and a continuous collector current rating of 1A. Offers a maximum power dissipation of 1W and a transition frequency of 150MHz. Packaged in a SOT-89 surface-mount case, this silicon transistor operates from -55°C to 150°C and is RoHS compliant.
Diodes FCX605TA technical specifications.
| Package/Case | SOT-89 |
| Collector Base Voltage (VCBO) | 140V |
| Collector Emitter Breakdown Voltage | 120V |
| Collector Emitter Saturation Voltage | 1.5V |
| Collector Emitter Voltage (VCEO) | 120V |
| Collector-emitter Voltage-Max | 1.5V |
| Continuous Collector Current | 1A |
| Current Rating | 1A |
| Emitter Base Voltage (VEBO) | 10V |
| Height | 1.5mm |
| Lead Free | Lead Free |
| Length | 4.5mm |
| Max Breakdown Voltage | 120V |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 150MHz |
| DC Rated Voltage | 120V |
| Weight | 0.001834oz |
| Width | 2.5mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes FCX605TA to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.