PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 40V collector-emitter breakdown voltage (VCEO) and a continuous collector current rating of -2A. Operates with a maximum power dissipation of 2W and a transition frequency of 100MHz. Packaged in a SOT-89 surface-mount case, this component is RoHS compliant and lead-free.
Frequency100MHz
PackageSOT-89
Current Rating-2A
MountingSurface Mount
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Technical Specifications
Diodes FCX790ATA technical specifications.
General
Package/Case
SOT-89
Collector Base Voltage (VCBO)
50V
Collector Emitter Breakdown Voltage
40V
Collector Emitter Saturation Voltage
-450mV
Collector Emitter Voltage (VCEO)
40V
Collector-emitter Voltage-Max
450mV
Continuous Collector Current
-2A
Current Rating
-2A
Emitter Base Voltage (VEBO)
5V
Frequency
100MHz
Gain Bandwidth Product
100MHz
Height
1.5mm
Lead Free
Lead Free
Length
4.5mm
Max Breakdown Voltage
40V
Max Collector Current
2A
Max Frequency
100MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
2W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
100MHz
DC Rated Voltage
-40V
Weight
0.001834oz
Width
2.5mm
Compliance
RoHS
Compliant
Datasheet
Diodes FCX790ATA Datasheet
Download the complete datasheet for Diodes FCX790ATA to view detailed technical specifications.
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