NPN silicon bipolar junction transistor (BJT) for small signal applications. Features a 25V collector-emitter breakdown voltage and a 200mA maximum collector current. Operates with a 30V collector-base voltage and a 5V emitter-base voltage. Offers a transition frequency of 250MHz and a gain bandwidth product of 300MHz. Packaged in a TO-236-3 surface-mount case, this component supports a wide operating temperature range from -55°C to 150°C.
PackageTO-236-3
Current Rating200mA
MountingSurface Mount
PolarityNPN
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Technical Specifications
Diodes FMMT4124TA technical specifications.
General
| Package/Case | TO-236-3 |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 25V |
| Collector-emitter Voltage-Max | 400mV |
| Current Rating | 200mA |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 300MHz |
| Height | 1mm |
| Lead Free | Contains Lead |
| Length | 3.05mm |
| Max Breakdown Voltage | 25V |
| Max Collector Current | 200mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 330mW |
| Mount | Surface Mount |
| Packaging | Cut Tape |
| Polarity | NPN |
| RoHS Compliant | No |
| Series | FMMT4124 |
| Transition Frequency | 250MHz |
| DC Rated Voltage | 25V |
| Weight | 0.00709oz |
| Width | 1.4mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Diodes FMMT4124TA Datasheet
Download the complete datasheet for Diodes FMMT4124TA to view detailed technical specifications.
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