PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 40V collector-emitter breakdown voltage and a continuous collector current of 200mA. Offers a transition frequency of 200MHz and a gain bandwidth product of 250MHz. Packaged in a TO-236-3 surface mount case, this component operates from -55°C to 150°C with a maximum power dissipation of 330mW.
PackageTO-236-3
Current Rating-200mA
MountingSurface Mount
PolarityPNP
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Technical Specifications
Diodes FMMT4126TA technical specifications.
General
| Package/Case | TO-236-3 |
| Collector Base Voltage (VCBO) | 25V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector-emitter Voltage-Max | 750mV |
| Current Rating | -200mA |
| Emitter Base Voltage (VEBO) | 4V |
| Gain Bandwidth Product | 250MHz |
| Height | 1mm |
| Lead Free | Contains Lead |
| Length | 3.05mm |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 600mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 330mW |
| Mount | Surface Mount |
| Packaging | Cut Tape |
| Polarity | PNP |
| RoHS Compliant | No |
| Series | FMMT4126 |
| Transition Frequency | 200MHz |
| DC Rated Voltage | -25V |
| Weight | 0.00709oz |
| Width | 1.4mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Diodes FMMT4126TA Datasheet
Download the complete datasheet for Diodes FMMT4126TA to view detailed technical specifications.
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