PNP Silicon Bipolar Junction Transistor (BJT) for surface mount applications. Features a 40V collector-emitter breakdown voltage and a continuous collector current rating of 600mA. Offers a transition frequency of 300MHz and a gain bandwidth product of 200MHz. Packaged in a TO-236-3 (SOT-23) case, this component operates from -55°C to 150°C with a maximum power dissipation of 330mW.
PackageTO-236-3
Current Rating-600mA
MountingSurface Mount
PolarityPNP
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Technical Specifications
Diodes FMMT4403TA technical specifications.
General
| Package/Case | TO-236-3 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector-emitter Voltage-Max | 300mV |
| Current Rating | -600mA |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 200MHz |
| Height | 1mm |
| Lead Free | Contains Lead |
| Length | 3.05mm |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 200mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 330mW |
| Mount | Surface Mount |
| Packaging | Cut Tape |
| Polarity | PNP |
| RoHS Compliant | No |
| Series | FMMT4403 |
| Transition Frequency | 300MHz |
| DC Rated Voltage | -40V |
| Weight | 0.00709oz |
| Width | 1.4mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Diodes FMMT4403TA Datasheet
Download the complete datasheet for Diodes FMMT4403TA to view detailed technical specifications.
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