NPN silicon bipolar junction transistor (BJT) for small signal applications. Features a 60V collector-emitter breakdown voltage and a 1A continuous collector current. Operates with a 150MHz transition frequency and a 350mV collector-emitter saturation voltage. Packaged in SOT-23 for surface mounting, this RoHS compliant component offers a wide operating temperature range from -55°C to 150°C.
Frequency150MHz
PackageSOT-23
Current Rating1A
MountingSurface Mount
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Technical Specifications
Diodes FMMT451TA technical specifications.
General
Package/Case
SOT-23
Collector Base Voltage (VCBO)
80V
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
350mV
Collector Emitter Voltage (VCEO)
60V
Collector-emitter Voltage-Max
350mV
Continuous Collector Current
1A
Current Rating
1A
Emitter Base Voltage (VEBO)
5V
Frequency
150MHz
Gain Bandwidth Product
150MHz
Height
1.1mm
Lead Free
Lead Free
Length
3mm
Max Breakdown Voltage
60V
Max Collector Current
1A
Max Frequency
150MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
500mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
500mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
150MHz
DC Rated Voltage
60V
Weight
0.000282oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Diodes FMMT451TA Datasheet
Download the complete datasheet for Diodes FMMT451TA to view detailed technical specifications.
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