NPN silicon bipolar junction transistor (BJT) for small signal applications. Features a 400V collector-emitter breakdown voltage and 225mA continuous collector current. Operates with a maximum power dissipation of 500mW and a transition frequency of 50MHz. Packaged in a TO-236-3 surface mount case, this component is lead-free and REACH SVHC compliant.
PackageTO-236-3
Current Rating225mA
MountingSurface Mount
PolarityNPN
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Technical Specifications
Diodes FMMT458TC technical specifications.
General
| Package/Case | TO-236-3 |
| Collector Base Voltage (VCBO) | 400V |
| Collector Emitter Breakdown Voltage | 400V |
| Collector-emitter Voltage-Max | 500mV |
| Continuous Collector Current | 225mA |
| Current Rating | 225mA |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 50MHz |
| Height | 1.1mm |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Collector Current | 225mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | No |
| Transition Frequency | 50MHz |
| DC Rated Voltage | 400V |
| Weight | 0.000282oz |
| Width | 1.4mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Diodes FMMT458TC Datasheet
Download the complete datasheet for Diodes FMMT458TC to view detailed technical specifications.
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