
NPN silicon bipolar junction transistor (BJT) for surface mount applications. Features a 60V collector-emitter breakdown voltage and 1A continuous collector current. Offers a 150MHz gain bandwidth product and a low collector-emitter saturation voltage of 160mV. Operates within a temperature range of -55°C to 150°C and is housed in a TO-236-3 package.
Diodes FMMT491TC technical specifications.
| Package/Case | TO-236-3 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 160mV |
| Collector-emitter Voltage-Max | 250mV |
| Continuous Collector Current | 1A |
| Current Rating | 1A |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 150MHz |
| Height | 1.02mm |
| Lead Free | Lead Free |
| Length | 3.04mm |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 150MHz |
| DC Rated Voltage | 60V |
| Weight | 0.000282oz |
| Width | 1.4mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes FMMT491TC to view detailed technical specifications.
No datasheet is available for this part.
