NPN silicon bipolar junction transistor (BJT) for small signal applications. Features a 60V collector-emitter breakdown voltage (VCEO) and a 1A continuous collector current. Offers a maximum power dissipation of 500mW and a transition frequency of 150MHz. Packaged in SOT-23 for surface mounting, this lead-free component operates from -55°C to 150°C.
Frequency150MHz
PackageSOT-23
Current Rating1A
MountingSurface Mount
Quick Jump:
Technical Specifications
Diodes FMMT493ATA technical specifications.
General
Package/Case
SOT-23
Collector Base Voltage (VCBO)
120V
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
500mV
Collector Emitter Voltage (VCEO)
60V
Collector-emitter Voltage-Max
500mV
Continuous Collector Current
1A
Current Rating
1A
Emitter Base Voltage (VEBO)
5V
Frequency
150MHz
Gain Bandwidth Product
150MHz
Height
1mm
hFE Min
20
Lead Free
Lead Free
Length
3.05mm
Max Breakdown Voltage
60V
Max Collector Current
1A
Max Frequency
150MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
500mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
500mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
150MHz
DC Rated Voltage
60V
Weight
0.000282oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Diodes FMMT493ATA Datasheet
Download the complete datasheet for Diodes FMMT493ATA to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
