NPN Bipolar Junction Transistor (BJT) for small signal applications. Features a 1A continuous collector current and a 100V collector-emitter breakdown voltage. Operates with a maximum collector current of 1A and a transition frequency of 150MHz. Packaged in a SOT-23-3 surface mount case, this silicon transistor offers a maximum power dissipation of 500mW and operates within a temperature range of -55°C to 150°C.
PackageSOT-23-3
Current Rating1A
MountingSurface Mount
PolarityNPN
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Technical Specifications
Diodes FMMT493TC technical specifications.
General
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | 120V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 600mV |
| Collector-emitter Voltage-Max | 600mV |
| Continuous Collector Current | 1A |
| Current Rating | 1A |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 150MHz |
| Height | 1.1mm |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 150MHz |
| DC Rated Voltage | 100V |
| Weight | 0.000282oz |
| Width | 1.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes FMMT493TC Datasheet
Download the complete datasheet for Diodes FMMT493TC to view detailed technical specifications.
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