PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 150V Collector-Emitter Breakdown Voltage (VCEO) and a 1A Continuous Collector Current (IC). Operates with a 100MHz Gain Bandwidth Product (fT) and offers a minimum hFE of 50. Packaged in a SOT-23 surface-mount case, this 3-pin component is RoHS compliant and designed for operation between -55°C and 150°C.
Frequency100MHz
PackageSOT-23
Current Rating-1A
MountingSurface Mount
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Technical Specifications
Diodes FMMT555TA technical specifications.
General
Package/Case
SOT-23
Collector Base Voltage (VCBO)
160V
Collector Emitter Breakdown Voltage
150V
Collector Emitter Saturation Voltage
-350mV
Collector Emitter Voltage (VCEO)
150V
Collector-emitter Voltage-Max
300mV
Continuous Collector Current
-1A
Current Rating
-1A
Emitter Base Voltage (VEBO)
-5V
Frequency
100MHz
Gain Bandwidth Product
100MHz
Height
1.1mm
hFE Min
50
Lead Free
Lead Free
Length
3mm
Max Breakdown Voltage
150V
Max Collector Current
1A
Max Frequency
100MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
500mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
500mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Transition Frequency
100MHz
DC Rated Voltage
-150V
Weight
0.000282oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Diodes FMMT555TA Datasheet
Download the complete datasheet for Diodes FMMT555TA to view detailed technical specifications.
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