PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 400V Collector-Emitter Breakdown Voltage (V(BR)CEO) and 400V DC Rated Voltage. Offers a continuous collector current of -150mA and a maximum power dissipation of 500mW. Operates across a wide temperature range from -55°C to 150°C. Packaged in a TO-236-3 surface mount case, supplied on tape and reel.
PackageTO-236-3
Current Rating-150mA
MountingSurface Mount
PolarityPNP
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Technical Specifications
Diodes FMMT558TC technical specifications.
General
| Package/Case | TO-236-3 |
| Collector Base Voltage (VCBO) | -400V |
| Collector Emitter Breakdown Voltage | 400V |
| Collector Emitter Saturation Voltage | -500mV |
| Collector-emitter Voltage-Max | 500mV |
| Continuous Collector Current | -150mA |
| Current Rating | -150mA |
| Emitter Base Voltage (VEBO) | -5V |
| Gain Bandwidth Product | 50MHz |
| Height | 1.1mm |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Collector Current | 150mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 50MHz |
| DC Rated Voltage | -400V |
| Weight | 0.000282oz |
| Width | 1.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes FMMT558TC Datasheet
Download the complete datasheet for Diodes FMMT558TC to view detailed technical specifications.
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