PNP Bipolar Junction Transistor (BJT) for surface mount applications. Features a maximum collector current of 150mA and a collector-emitter breakdown voltage of 500V. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 500mW. This RoHS compliant component is supplied in a TO-236-3 package and offers a transition frequency of 60MHz.
PackageTO-236-3
MountingSurface Mount
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Technical Specifications
Diodes FMMT560QTA technical specifications.
General
| Package/Case | TO-236-3 |
| Collector Emitter Breakdown Voltage | 500V |
| Collector-emitter Voltage-Max | 500mV |
| Max Breakdown Voltage | 500V |
| Max Collector Current | 150mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Packaging | Cut Tape |
| RoHS Compliant | Yes |
| Transition Frequency | 60MHz |
Compliance
| RoHS | Compliant |
Datasheet
Diodes FMMT560QTA Datasheet
Download the complete datasheet for Diodes FMMT560QTA to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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