PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 500V Collector Emitter Breakdown Voltage (VCEO) and a 500V Collector Base Voltage (VCBO). Offers a continuous collector current of -150mA and a maximum collector current of 150mA. Operates with a transition frequency of 60MHz and a maximum power dissipation of 500mW. Packaged in a SOT-23 surface mount case, this lead-free component is REACH SVHC compliant.
Frequency60MHz
PackageSOT-23
Current Rating-500mA
MountingSurface Mount
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Technical Specifications
Diodes FMMT560TC technical specifications.
General
Package/Case
SOT-23
Collector Base Voltage (VCBO)
500V
Collector Emitter Breakdown Voltage
500V
Collector Emitter Saturation Voltage
-500mV
Collector Emitter Voltage (VCEO)
500V
Collector-emitter Voltage-Max
500mV
Continuous Collector Current
-150mA
Current Rating
-500mA
Emitter Base Voltage (VEBO)
-7V
Frequency
60MHz
Gain Bandwidth Product
60MHz
Height
1.1mm
Lead Free
Lead Free
Length
3mm
Max Breakdown Voltage
500V
Max Collector Current
150mA
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
500mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
10000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
500mW
Radiation Hardening
No
Reach SVHC Compliant
Yes
Transition Frequency
60MHz
DC Rated Voltage
-500V
Weight
0.000282oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Diodes FMMT560TC Datasheet
Download the complete datasheet for Diodes FMMT560TC to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.