NPN bipolar junction transistor (BJT) for surface mount applications. Features 80V collector-emitter breakdown voltage (VCEO) and 1.5A continuous collector current (IC). Operates with a 160MHz gain bandwidth product (GBW) and a maximum power dissipation of 625mW. Packaged in a SOT-23 plastic case, this silicon transistor is RoHS compliant and operates across a temperature range of -55°C to 150°C.
Frequency160MHz
PackageSOT-23
Voltage80V
Current15A
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Technical Specifications
Diodes FMMT620TA technical specifications.
General
Package/Case
SOT-23
Collector Base Voltage (VCBO)
80V
Collector Emitter Breakdown Voltage
80V
Collector Emitter Saturation Voltage
160mV
Collector Emitter Voltage (VCEO)
80V
Collector-emitter Voltage-Max
200mV
Continuous Collector Current
1.5A
Current
15A
Current Rating
1.5A
Emitter Base Voltage (VEBO)
5V
Frequency
160MHz
Gain Bandwidth Product
160MHz
Height
1mm
Lead Free
Lead Free
Length
3.05mm
Max Breakdown Voltage
80V
Max Collector Current
1.5A
Max Frequency
160MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
625mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
625mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
160MHz
Voltage
80V
DC Rated Voltage
80V
Weight
0.000282oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Diodes FMMT620TA Datasheet
Download the complete datasheet for Diodes FMMT620TA to view detailed technical specifications.
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