NPN silicon bipolar junction transistor for surface mount applications. Features 80V collector-emitter breakdown voltage and 1.5A continuous collector current. Offers a transition frequency of 160MHz and a maximum power dissipation of 625mW. Packaged in TO-236-3 (SUPERSOT-3) for tape and reel deployment. Operates across a temperature range of -55°C to 150°C.
Diodes FMMT620TC technical specifications.
| Package/Case | TO-236-3 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 160mV |
| Collector-emitter Voltage-Max | 200mV |
| Continuous Collector Current | 1.5A |
| Current | 15A |
| Current Rating | 1.5A |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 160MHz |
| Height | 1mm |
| Lead Free | Lead Free |
| Length | 3.05mm |
| Max Collector Current | 1.5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Surface Mount |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 160MHz |
| Voltage | 80V |
| DC Rated Voltage | 80V |
| Weight | 0.000282oz |
| Width | 1.4mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes FMMT620TC to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.