PNP Silicon Bipolar Junction Transistor (BJT) in a 3-pin SOT-23 surface mount package. Features a 40V Collector-Emitter Breakdown Voltage (VCEO) and a continuous collector current rating of -1.5A. Offers a maximum power dissipation of 625mW and a transition frequency of 190MHz. Operates within a temperature range of -55°C to 150°C and is RoHS compliant.
Diodes FMMT720TA technical specifications.
Download the complete datasheet for Diodes FMMT720TA to view detailed technical specifications.
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