PNP Silicon Bipolar Junction Transistor (BJT) in a SOT-23 package. Features a 70V Collector-Emitter Breakdown Voltage (VCEO) and a continuous collector current of -1.5A. Offers a maximum power dissipation of 625mW and a transition frequency of 200MHz. Designed for surface mounting with a lead-free, RoHS-compliant construction.
Frequency200MHz
PackageSOT-23
Current Rating-1.5A
MountingSurface Mount
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Technical Specifications
Diodes FMMT722TA technical specifications.
General
Package/Case
SOT-23
Collector Base Voltage (VCBO)
70V
Collector Emitter Breakdown Voltage
70V
Collector Emitter Saturation Voltage
-175mV
Collector Emitter Voltage (VCEO)
70V
Collector-emitter Voltage-Max
260mV
Continuous Collector Current
-1.5A
Current Rating
-1.5A
Emitter Base Voltage (VEBO)
5V
Frequency
200MHz
Gain Bandwidth Product
200MHz
Height
1mm
Lead Free
Lead Free
Length
3.05mm
Max Breakdown Voltage
70V
Max Collector Current
1.5A
Max Frequency
200MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
625mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
625mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
200MHz
DC Rated Voltage
-70V
Weight
0.000282oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Diodes FMMT722TA Datasheet
Download the complete datasheet for Diodes FMMT722TA to view detailed technical specifications.
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