PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 100V Collector Emitter Breakdown Voltage (VCEO) and a continuous collector current rating of -1A. Offers a maximum power dissipation of 625mW and a transition frequency of 200MHz. Packaged in a 3-pin SOT-23 surface-mount case, this RoHS compliant component operates from -55°C to 150°C.
Frequency200MHz
PackageSOT-23
Current Rating-1A
MountingSurface Mount
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Technical Specifications
Diodes FMMT723TA technical specifications.
General
Package/Case
SOT-23
Collector Base Voltage (VCBO)
100V
Collector Emitter Breakdown Voltage
100V
Collector Emitter Saturation Voltage
-210mV
Collector Emitter Voltage (VCEO)
100V
Collector-emitter Voltage-Max
330mV
Continuous Collector Current
-1A
Current Rating
-1A
Emitter Base Voltage (VEBO)
5V
Frequency
200MHz
Gain Bandwidth Product
200MHz
Height
1mm
hFE Min
250
Lead Free
Lead Free
Length
3.05mm
Max Breakdown Voltage
100V
Max Collector Current
1A
Max Frequency
200MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
625mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
625mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
200MHz
DC Rated Voltage
-100V
Weight
0.000282oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Diodes FMMT723TA Datasheet
Download the complete datasheet for Diodes FMMT723TA to view detailed technical specifications.
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