NPN silicon bipolar junction transistor (BJT) for general-purpose amplification and switching. Features a 300V collector-emitter breakdown voltage (VCEO) and a maximum continuous collector current of 200mA. Operates with a 50MHz transition frequency and a minimum DC current gain (hFE) of 25. Packaged in a compact SOT-23 surface-mount case, this RoHS compliant component offers a maximum power dissipation of 330mW and operates across a temperature range of -55°C to 150°C.
Frequency50MHz
PackageSOT-23
Current Rating200mA
MountingSurface Mount
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Technical Specifications
Diodes FMMTA42TA technical specifications.
General
Package/Case
SOT-23
Collector Base Voltage (VCBO)
300V
Collector Emitter Breakdown Voltage
300V
Collector Emitter Saturation Voltage
500mV
Collector Emitter Voltage (VCEO)
300V
Collector-emitter Voltage-Max
500mV
Continuous Collector Current
200mA
Current Rating
200mA
Emitter Base Voltage (VEBO)
5V
Frequency
50MHz
Gain Bandwidth Product
50MHz
Height
1mm
hFE Min
25
Lead Free
Lead Free
Length
3.05mm
Max Breakdown Voltage
300V
Max Collector Current
200mA
Max Frequency
50MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
330mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
330mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
50MHz
DC Rated Voltage
300V
Weight
0.000282oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Diodes FMMTA42TA Datasheet
Download the complete datasheet for Diodes FMMTA42TA to view detailed technical specifications.
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