PNP Bipolar Junction Transistor (BJT) for medium power applications. Features a -80V Collector Base Voltage and 80V Collector Emitter Breakdown Voltage. Offers a -500mA Continuous Collector Current and a -250mV Collector Emitter Saturation Voltage. Operates with a 100MHz Gain Bandwidth Product and Transition Frequency. Packaged in a TO-236-3 surface mount case, this component is RoHS and Lead Free compliant.
Diodes FMMTA56TC technical specifications.
| Package/Case | TO-236-3 |
| Collector Base Voltage (VCBO) | -80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | -250mV |
| Collector-emitter Voltage-Max | 250mV |
| Continuous Collector Current | -500mA |
| Current Rating | -500mA |
| Emitter Base Voltage (VEBO) | -4V |
| Gain Bandwidth Product | 100MHz |
| Height | 1mm |
| Lead Free | Lead Free |
| Length | 3.05mm |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 330mW |
| Mount | Surface Mount |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| DC Rated Voltage | -80V |
| Weight | 0.000282oz |
| Width | 1.4mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes FMMTA56TC to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.