NPN silicon bipolar junction transistor (BJT) for small signal applications. Features a 50V collector-emitter breakdown voltage, 1.25A continuous collector current, and a 180MHz transition frequency. Housed in a 3-pin SOT-23 surface-mount package with dimensions of 3.05mm length, 1.4mm width, and 1mm height. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 500mW.
PackageTO-236-3
Current Rating1.25A
MountingSurface Mount
PolarityNPN
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Technical Specifications
Diodes FMMTL619TC technical specifications.
General
| Package/Case | TO-236-3 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector-emitter Voltage-Max | 330mV |
| Continuous Collector Current | 1.25A |
| Current Rating | 1.25A |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 180MHz |
| Height | 1mm |
| Lead Free | Lead Free |
| Length | 3.05mm |
| Max Collector Current | 1.25A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | No |
| Transition Frequency | 180MHz |
| DC Rated Voltage | 50V |
| Weight | 0.000282oz |
| Width | 1.4mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Diodes FMMTL619TC Datasheet
Download the complete datasheet for Diodes FMMTL619TC to view detailed technical specifications.
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