The FXT655 is a TO-92 packaged NPN bipolar junction transistor with a collector-base voltage rating of 150V and a maximum collector current of 1A. It has a gain bandwidth product of 30MHz and a maximum power dissipation of 1W. The transistor operates over a temperature range of -55°C to 150°C and is not RoHS compliant.
PackageTO-92
PolarityNPN
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Technical Specifications
Diodes FXT655 technical specifications.
General
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 150V |
| Collector-emitter Voltage-Max | 150V |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 30MHz |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Polarity | NPN |
| RoHS Compliant | No |
Compliance
| RoHS | Not Compliant |
Datasheet
Diodes FXT655 Datasheet
Download the complete datasheet for Diodes FXT655 to view detailed technical specifications.
No datasheet is available for this part.